050-5944 rev a 1-2005 apt6030bvfr APT6030SVFR 600v 21a 0.300 ? ? ? ? ? maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 10.5a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (v ds = 480v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 600 0.300 250 1000 100 24 apt6030bvfr_svfr 600 21 84 30 40 298 2.38 -55 to 150 300 21 30 1300 g d s power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? faster switching ? avalanche energy rated ? lower leakage ? ? to-247 or surface mount d 3 pak package power mos v ? fredfet fast recovery body diode bvfr svfr to-247 d 3 pak
050-5944 rev a 1-2005 dynamic characteristics apt6030bvfr_svfr source-drain diode ratings and characteristics thermal characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -21a) peak diode recovery dv / dt 5 reverse recovery time (i s = -21a, di / dt = 100a/s) reverse recovery charge (i s = -21a, di / dt = 100a/s) peak recovery current (i s = -21a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 21 84 1.3 15 t j = 25c 250 t j = 125c 525 t j = 25c 1.5 t j = 125c 5.5 t j = 25c 13 t j = 125c 23 symbol r jc r ja min typ max 0.42 40 unit c/w characteristic junction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 5.90mh, r g = 25 ? , peak i l = 21a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 21a di / dt 700a/s v r 600v t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 21a @ 25c v gs = 15v v dd = 300v i d = 21a @ 25c r g = 1.6 ? min typ max 3750 430 160 150 18 60 12 10 47 8 unit pf nc ns characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01
050-5944 rev a 1-2005 typical performance curves apt6030bvfr_svfr 0 50 100 150 200 250 300 0 4 8 12 16 20 02468 0816243240 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 0.5 i d [cont.] v gs = 10v 40 32 24 16 8 0 1.5 1.4 1.3 1.2 1.1 1.0 0.9 1.15 1.10 1.05 1.00 0.95 0.90 1.2 1.1 1.0 0.9 0.8 0.7 0.6 40 32 24 16 8 0 40 32 24 16 8 0 25 20 15 10 5 0 2.5 2.0 1.5 1.0 0.5 0.0 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle 4.5v 5v v gs =5.5v, 6v, 10v & 15v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v gs =6v, 10v & 15v 4v 4.5v 5v 5.5v 4v normalized to v gs = 10v @ 0.5 i d [cont.] v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized)
050-5944 rev a 1-2005 apt6030bvfr_svfr apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. to - 247 package outline (bvfr) d 3 pak package outline (svfr) 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 2.40 (.094) 2.70 (.106) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 1 5 10 50 100 600 .01 .1 1 10 50 0 50 100 150 200 250 300 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t c =+25c t j =+150c single pulse 100 50 10 5 1 0.5 0.1 20 16 12 8 4 0 operation here limited by r ds (on) t j =+150c t j =+25c v ds =120v v ds =480v i d = i d [cont.] 10s 1ms 10ms 100ms dc 100s v ds =300v v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) c rss c oss c iss 15,000 10,000 5,000 1,000 500 100 100 50 10 5 1
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